? semiconductor components industries, llc, 2016 september, 2016 ? rev. 2 1 publication order number: NLAS3157/d NLAS3157, nlas3257 low voltage spdt mux / demux analog switch the NLAS3157 mux / demux analog switch is an advanced high? speed single?pole double?throw (spdt) cmos switch. it can be used as an analog switch or as a low?delay bus switch. break?before?make switching prevents both switches being enabled simultaneously. this eliminates signal disruption during switching. the control input, s, is independent of supply voltage line switch in an ultra?small footprint. features ? high speed: t pd = 0.25 ns (max) @ v cc = 4.5 v ? r on : 8.5 typ @ v cc = 4.2 v ? c on : 7.5 pf typ @ v cc = 3.3 v ? v cc range: 1.65 v to 4.5 v ? ultra?small 1 x 1 mm package ? this device is pb?free, halogen free/bfr free and rohs compliant typical applications ? mobile phones, pdas, camera gnd a v cc b0 b1 1 2 34 5 figure 1. ullga6 (NLAS3157) (top view) s 6 b1 s b0 a b1 b0 gnd s a v cc 1 2 3 6 5 4 figure 2. xllga6 (nlas3257) (top view) figure 3. logic diagram www. onsemi.com ordering information see detailed ordering and shipping information on page 5 o f this data sheet. marking diagrams function table l h input s function a = b0 a = b1 ullga6 1.0 x 1.0 case 613ad y = specific device code m = date code m y xllga6 1.0 x 1.0 case 713ad l = specific device code m = date code l m
NLAS3157, nlas3257 www. onsemi.com 2 table 1. maximum ratings symbol parameter value unit v cc dc supply voltage ?0.5 to +5.5 v v in control input voltage (s pin) ?0.5 to +5.5 v v is switch input / output voltage (a, bo, b1 pins) ?0.5 to v cc + 0.5 v i ik control dc input diode current (s pin) v in < gnd ?50 ma i ok switch i/o port dc diode current (a, bo, b1 pins) v i/o < gnd or v i/o > v cc 50 ma i o on?state switch current 128 ma continuous current through v cc or gnd 150 ma i cc dc supply current per supply pin 150 ma i gnd dc ground current per ground pin 150 ma t stg storage temperature range ?65 to +150 c t l lead temperature, 1 mm from case for 10 seconds 260 c t j junction temperature under bias 150 c ja thermal resistance (note 1) 407 c/w p d power dissipation in still air at 85 c (note 1) 1.5 mw msl moisture sensitivity level 1 f r flammability rating oxygen index: 28 to 34 ul 94 v?0 @ 0.125 in v esd esd withstand voltage human body mode (note 2) machine mode (note 3) charged device mode (note 4) >8000 >300 >2000 v i latchup latchup performance above v cc and below gnd at 85 c (note 5) 100 ma stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. measured with minimum pad spacing on an fr4 board, using 10 mm?by?1 inch, 2 ounce copper trace no air flow . 2. tested to eia/ jesd22?a 114?a 3. tested to eia/ jesd22?a 115?a 4. tested to jesd22?c101?a 5. tested to eia / jesd78 table 2. recommended operating conditions symbol parameter min max unit v cc positive dc supply voltage 1.65 4.5 v v i control input voltage (s pin) 0 4.5 v v is switch input / output voltage (a, bo, b1 pins) 0 v cc v t a operating free?air temperature ?40 +85 c t / v input transition rise or fall rate control input switch i/o 0 0 5 dc ns/v functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
NLAS3157, nlas3257 www. onsemi.com 3 table 3. dc electrical characteristics (typical: t = 25 c, v cc = 3.3 v) symbol parameter test conditions v cc (v) ?40 c to +85 c unit min typ max v ih control input, high voltage 1.65 2.7 3.3 4.2 0.75 1.25 1.52 1.94 v v il control input, low voltage 1.65 2.7 3.3 4.2 0.25 0.4 0.4 0.5 v i in control input, leakage current 0 v is v cc 1.65 ? 4.5 1.0 a i cc quiescent supply current v is = v cc or gnd; i d = 0 a 1.65 ? 4.5 1.0 a i nc (off) i no (off) nc or no leakage current v is = 1.65 v to 4.5 v 4.5 10 100 na i com (on) com on leakage current v is = 1.65 v to 4.5 v 4.5 10 100 na on resistance (typical: t = 25 c) r on peak on?resistance i on = 8 ma v is = 0 v to v cc 1.65 2.7 3.3 4.2 15.4 10.8 9.5 8.5 23.2 12.4 11.0 9.9 r flat on?resistance flatness i on = 8 ma v is = 0 v to v cc 1.65 2.7 3.3 4.2 5.5 2.9 2.7 2.8 10.2 3.3 3.3 3.3 r on delta on?resistance i on = 8 ma v is = 0 v to v cc 1.65 2.7 3.3 4.2 0.3 0.3 0.3 0.3 0.35 0.35 0.35 0.35 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. table 4. ac electrical characteristics symbol parameter test conditions v cc (v) ?40 c to +85 c unit min typ max timing/frequency (typical: t = 25 c, v cc = 3.3 v, r l = 50 , c l = 35 pf, f = 1 mhz) t pd propagation delay, a to bn or bn to a (see figures 4 and 5) 1.65 ? 4.5 0.25 ns t on turn?on time (see figures 7 and 8) 1.65 ? 4.5 3.1 13.0 30.0 ns t off turn?off time (see figures 7 and 8) 1.65 ? 4.5 3.4 12.0 25.0 ns t bbm break?before?make time (see figure 6) 1.65 ? 4.5 2.0 ns bw ?3 db bandwidth c l = 5 pf 1.65 ? 4.5 1000 mhz isolation (typical: t = 25 c, v cc = 3.3 v, r l = 50 , c l = 5 pf) o irr off?isolation f = 240 mhz (see figure 9) 1.65 ? 4.5 - 21 db x talk non?adjacent channel crosstalk f = 240 mhz 1.65 ? 4.5 - 21 db
NLAS3157, nlas3257 www. onsemi.com 4 table 4. ac electrical characteristics capacitance (typical: t = 25 c) c in control pin input capacitance v cc = 0 v, f = 1 mhz 1.5 pf v cc = 0 v , f = 10 mhz 1.0 c on on capacitance v cc = 3.3 v; oe = 0 v, s = 0 v or 3.3 v, f = 1 mhz 7.5 v cc = 3.3 v; oe = 0 v, s = 0 v or 3.3 v, f = 10 mhz 6.5 c off off capacitance v cc = v is = 3.3 v; oe = 0 v, s = 3.3 v or 0 v, f = 1 mhz 3.8 v cc = v is = 3.3 v; oe = 0 v, s = 3.3 v or 0 v, f = 10 mhz 2.0 figure 4. propagation delay waveforms figure 5. propagation delay test circuit pulse generator r t dut v cc r l c l r t = z out of pulse generator (typically 50 ) gnd 50% 50% v cc input a output y t phl t plh 50% v ol v oh v cc figure 6. t bbm (time break?before?make)
NLAS3157, nlas3257 www. onsemi.com 5 figure 7. t on / t off figure 8. t on / t off figure 9. off channel isolation / on channel loss (bw)/crosstalk (on channel to off channel) / v onl ordering information device package shipping ? NLAS3157mx3tcg ullga6 ? 1.0 x 1.0, 0.35p (pb?free) 3000 / tape & reel nlas3257cmx3tcg xllga6 ? 1.0 x 1.0, 0.35p (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NLAS3157, nlas3257 www. onsemi.com 6 package dimensions ullga6 1.0x1.0, 0.35p case 613ad issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip. 4. a maximum of 0.05 pull back of the plated terminal from the edge of the package is allowed. a b e d bottom view b e 6x 0.10 b 0.05 a c c l 5x note 3 0.10 c pin one reference top view 0.10 c 6x a a1 0.05 c 0.05 c c seating plane side view l1 1 3 4 6 dim min max millimeters a ??? 0.40 a1 0.00 0.05 b 0.12 0.22 d 1.00 bsc e 1.00 bsc e 0.35 bsc l 0.25 0.35 l1 0.30 0.40 soldermask defined* dimensions: millimeters 0.22 5x 0.48 6x 1.18 0.53 pitch *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. note 4 0.35 1 mounting footprint pkg outline
NLAS3157, nlas3257 www. onsemi.com 7 package dimensions xllga6 1.0x1.0, 0.35p case 713ad issue o ?? ?? a d e b c 0.05 pin one 2x reference 2x top view side view bottom view a l c c 0.05 c 0.05 c 0.05 a1 seating plane e2 e 6x note 3 b 6x 0.07 c 0.05 c a b b dim min max millimeters a ??? 0.40 a1 0.00 0.05 b 0.17 0.23 d 1.00 bsc e 1.00 bsc e 0.35 bsc l 0.27 0.33 23 6 4 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1 e2 0.60 bsc l1 0.05 ref m recommended m 5 note 4 l1 dimensions: millimeters 5x 0.50 0.55 1.25 6x 0.22 1 0.35 pitch package outline on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NLAS3157/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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